CMOS Models (1.2 micron)

* SPICE LEVEL 2 Model for 1.2 mu Process

.MODEL NMOS NMOS LEVEL=2 LD=0.15U TOX=200.0E-10
+ NSUB=5.36726E+15 VTO=0.743469 KP=8.00059E-05 GAMMA=0.543
+ PHI=0.6 U0=655.881 UEXP=0.157282 UCRIT=31443.8
+ DELTA=2.39824 VMAX=55260.9 XJ=0.25U LAMBDA=0.0367072
+ NFS=1E+12 NEFF=1.001 NSS=1E+11 TPG=1.0 RSH=70.00
+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0003 MJ=0.6585 
+ CJSW=8.0E-10 MJSW=0.2402 PB=0.58
* Weff = WDrawn - Delta_W
* The suggested Delta_W is 1.9970E-07

.MODEL PMOS PMOS LEVEL=2 LD=0.15U TOX=200.0E-10
+ NSUB=4.3318E+15 VTO=-0.738861 KP=2.70E-05 GAMMA=0.58
+ PHI=0.6 U0=261.977 UEXP=0.323932 UCRIT=65719.8
+ DELTA=1.79192 VMAX=25694 XJ=0.25U LAMBDA=0.0612279
+ NFS=1E+12 NEFF=1.001 NSS=1E+11 TPG=-1.0 RSH=120.6
+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0005 MJ=0.5052 
+ CJSW=1.349E-10 MJSW=0.2417 PB=0.64
* Weff = WDrawn - Delta_W
* The suggested Delta_W is 3.1280E-07

Bipolar npn (1.2 micron)

.model npn npn bf=100 is=1e-17 re=20 rc=75 rb=120 cje=20ff cjc=22ff cjs=47ff 
+ vaf=50V 

Gaas Devices

* enhancement JFET
.model enh.1 njf
+ vto=0.23 beta=250u lambda=0.2 alpha=6.5 ucrit=0 gamds=0 ldel=-0.4u wdel=-0.15u
+ rsh=210 n=1.16 is=0.5m level=3 sat=0 acm=1 capop=1 gcap=1.2e-3 crat=0.666
 
* depletion JFET
.model dp njf
+ vto=-0.825 beta=190u lambda=0.065 alpha=3.5 ucrit=0 gamds=0 ldel=-0.4u wdel=-0
.15u
+ rsh=210 n=1.18 is=10m level=3 sat=0 acm=1 capop=1 gcap=1.2e-3 crat=0.666