MOSIS PARAMETRIC TEST RESULTS RUN: N99Y VENDOR: TSMC TECHNOLOGY: SCN025 FEATURE SIZE: 0.25 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: TSMC 025SPPM. TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.36/0.24 Vth 0.56 -0.53 Volts SHORT 20.0/0.24 Idss 590 -263 uA/um Vth 0.60 -0.59 Volts Vpt 7.6 -7.2 Volts WIDE 20.0/0.24 Ids0 13.1 -1.7 pA/um LARGE 20.0/20.0 Vth 0.52 -0.63 Volts Vjbkd 6.1 -7.0 Volts Ijlk -22.9 -7.5 pA Gamma V^0.5 K' (Uo*Cox/2) 109.7 -25.5 uA/V^2 COMMENTS: Poly bias varies with design technology. To account for mask and etch bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL ----------------- ------- SCN5M_DEEP (lambda=0.12) 0.03 thick oxide, NMOS 0.02 thick oxide, PMOS -0.03 TSMC25 0.03 thick oxide, NMOS 0.03 thick oxide, PMOS 0.03 SCN3M_SUBM (lambda=0.15) -0.03 thick oxide, NMOS 0.02 thick oxide, PMOS -0.03 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 Volts PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 UNITS Sheet Resistance 4.7 3.4 4.1 0.08 0.07 0.07 0.07 ohms/sq Width Variation 0.09 0.14 0.12 0.08 0.03 0.01 -0.03 microns (measured - drawn) Contact Resistance 6.9 6.0 5.8 2.04 4.06 5.72 ohms Gate Oxide Thickness 57 angstrom PROCESS PARAMETERS MTL5 N_WELL UNITS Sheet Resistance 0.03 1214 ohms/sq Width Variation 0.08 microns (measured - drawn) Contact Resistance 7.52 ohms CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 MTL5 N_WELL UNITS Area (substrate) 1727 1888 97 37 19 13 8 8 63 aF/um^2 Area (N+active) 6042 50 20 14 11 9 aF/um^2 Area (P+active) 5796 aF/um^2 Area (poly) 61 18 10 7 6 aF/um^2 Area (metal1) 39 15 9 7 aF/um^2 Area (metal2) 37 15 9 aF/um^2 Area (metal3) 38 15 aF/um^2 Area (metal4) 38 aF/um^2 Fringe (substrate) 417 317 21 57 54 51 24 aF/um Fringe (poly) 67 39 29 24 21 aF/um Fringe (metal1) 49 33 27 24 aF/um Fringe (metal2) 53 34 29 aF/um Fringe (metal3) 53 35 aF/um Fringe (metal4) 59 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.05 Volts Vinv 1.5 1.13 Volts Vol (100 uA) 2.0 0.22 Volts Voh (100 uA) 2.0 2.07 Volts Vinv 2.0 1.19 Volts Gain 2.0 -16.66 Ring Oscillator Freq. DIV1024_T (31-stage,2.5) 168.69 MHz DIV1024 (31-stage,2.5) 299.76 MHz Ring Oscillator Power DIV1024_T (31-stage,2.5) 0.06 uW/MHz/g DIV1024 (31-stage,2.5) 0.06 uW/MHz/g COMMENTS: DEEP_SUBMICRON N99Y SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Dec 6/99 * LOT: n99y WAF: 10 * Temperature_parameters=Default .MODEL CMOSN NMOS ( +LEVEL = 49 acm = 3 hdif = 0.35e-6 +VERSION = 3.1 TNOM = 27 TOX = 5.7E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.4365497 +K1 = 0.3915623 K2 = 0.0175145 K3 = 1E-3 +K3B = 2.6588343 W0 = 1E-7 NLX = 1.111465E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = -0.0408321 DVT1 = 0.0746768 DVT2 = 0.307109 +U0 = 407.1177485 UA = 9.442714E-11 UB = 1.092986E-18 +UC = 1.63196E-11 VSAT = 1.365087E5 A0 = 1.3189329 +AGS = 0.2711719 B0 = 3.291713E-8 B1 = -1E-7 +KETA = 4.645753E-3 A1 = 0 A2 = 1 +RDSW = 439.9558234 PRWG = 0.0345487 PRWB = -0.0441065 +WR = 1 WINT = 1.645705E-9 LINT = 1.116516E-9 +XL = 3E-8 XW = 0 DWG = -1.494138E-9 +DWB = 1.459097E-8 VOFF = -0.1026054 NFACTOR = 0.1344887 +CIT = 0 CDSC = 1.527511E-3 CDSCD = 0 +CDSCB = 0 ETA0 = 1.930311E-3 ETAB = 2.946158E-4 +DSUB = 0.0214865 PCLM = 1.3387947 PDIBLC1 = 0.480652 +PDIBLC2 = 9.034986E-3 PDIBLCB = -1E-3 DROUT = 0.5593223 +PSCBE1 = 9.843289E9 PSCBE2 = 2.10878E-9 PVAG = 1.0033136 +DELTA = 0.01 MOBMOD = 1 PRT = 0 +UTE = -1.5 KT1 = -0.11 KT1L = 0 +KT2 = 0.022 UA1 = 4.31E-9 UB1 = -7.61E-18 +UC1 = -5.6E-11 AT = 3.3E4 WL = 0 +WLN = 1 WW = -1.22182E-16 WWN = 1.2127 +WWL = 0 LL = 0 LLN = 1 +LW = 0 LWN = 1 LWL = 0 +CAPMOD = 2 XPART = 0.4 CGDO = 3.11E-10 +CGSO = 3.11E-10 CGBO = 1E-11 CJ = 1.758521E-3 +PB = 0.99 MJ = 0.457547 CJSW = 4.085057E-10 +PBSW = 0.8507757 MJSW = 0.3374073 PVTH0 = 7.147521E-5 +PRDSW = -67.2161633 PK2 = -1.344599E-3 WKETA = 3.035972E-3 +LKETA = -9.0406E-3 LAGS = -0.3012 ) * .MODEL CMOSP PMOS ( +LEVEL = 49 acm = 3 hdif = 0.35e-6 +VERSION = 3.1 TNOM = 27 TOX = 5.7E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.6586391 +K1 = 0.5199897 K2 = 0.0357513 K3 = 0 +K3B = 15.5613889 W0 = 1E-6 NLX = 1E-9 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 2.6100181 DVT1 = 0.4363142 DVT2 = -0.042436 +U0 = 196.024903 UA = 2.767112E-9 UB = 1.90709E-18 +UC = 6.166867E-11 VSAT = 1.975064E5 A0 = 0.2398712 +AGS = 0.0943234 B0 = 3.21184E-6 B1 = 5E-6 +KETA = 0.0312217 A1 = 0 A2 = 1 +RDSW = 997.072701 PRWG = -0.1916111 PRWB = -0.495 +WR = 1 WINT = 2.527293E-9 LINT = 1.254514E-8 +XL = 3E-8 XW = 0 DWG = -3.253948E-8 +DWB = 4.92072E-8 VOFF = -0.15 NFACTOR = 1.5460516 +CIT = 0 CDSC = 1.413317E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.7241245 ETAB = -0.240523 +DSUB = 1.0813613 PCLM = 2.0772083 PDIBLC1 = 4.31459E-4 +PDIBLC2 = 0.0252121 PDIBLCB = -9.960722E-4 DROUT = 0.0432774 +PSCBE1 = 3.191047E10 PSCBE2 = 1.323218E-8 PVAG = 0.0420525 +DELTA = 0.01 MOBMOD = 1 PRT = 0 +UTE = -1.5 KT1 = -0.11 KT1L = 0 +KT2 = 0.022 UA1 = 4.31E-9 UB1 = -7.61E-18 +UC1 = -5.6E-11 AT = 3.3E4 WL = 0 +WLN = 1 WW = 0 WWN = 1 +WWL = 0 LL = 0 LLN = 1 +LW = 0 LWN = 1 LWL = 0 +CAPMOD = 2 XPART = 0.4 CGDO = 2.68E-10 +CGSO = 2.68E-10 CGBO = 1E-11 CJ = 1.902493E-3 +PB = 0.9810285 MJ = 0.4644362 CJSW = 3.142741E-10 +PBSW = 0.9048624 MJSW = 0.3304452 PVTH0 = 4.952976E-3 +PRDSW = 29.8169373 PK2 = 3.383373E-3 WKETA = -7.913501E-3 +LKETA = -0.0208318 ) * Download Text File