A 20 GHz fully-integrated power amplifier in a 0.13 µm CMOS process

Hanching Fuh
 2003 M.S. (advisor: Ali Niknejad)

This research focuses on the design of high frequency, fully- integrated CMOS power amplifiers, with the eventual goal of creating a PA for the unlicensed 60 GHz spectrum. As a first iteration to study design issues in millimeter-wave frequency PAs, a 20 GHz Class AB PA design has been implemented in ST Microelectronics’ 0.13 µm CMOS process with the design goal of providing > 100 mW into a 50O load.