MOSIS PARAMETRIC TEST RESULTS RUN: T18H (LO_EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.54 -0.54 volts SHORT 20.0/0.18 Idss 530 -268 uA/um Vth 0.55 -0.54 volts Vpt 4.7 -5.4 volts WIDE 20.0/0.18 Ids0 7.5 -5.4 pA/um LARGE 50/50 Vth 0.45 -0.44 volts Vjbkd 3.8 -5.0 volts Ijlk <50.0 <50.0 pA Gamma 0.55 0.63 V^0.5 K' (Uo*Cox/2) 167.5 -35.5 uA/V^2 Low-field Mobility 407.46 86.36 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask and etch bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL XW ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) -0.02 -0.01 thick oxide -0.03 -0.01 TSMC18 -0.02 0.00 thick oxide -0.02 0.00 SCN6M_SUBM (lambda=0.10) -0.04 0.00 thick oxide -0.07 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS Sheet Resistance 6.8 7.6 7.9 60.5 339.4 0.08 0.08 ohms/sq Contact Resistance 10.8 11.3 10.0 6.58 ohms Gate Oxide Thickness 42 angstrom PROCESS PARAMETERS MTL3 MTL4 MTL5 MTL6 N_WELL UNITS Sheet Resistance 0.08 0.08 0.08 0.03 981 ohms/sq Contact Resistance 13.75 19.26 25.24 27.09 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY M1 M2 M3 M4 M5 M6 N_WELL UNITS Area (substrate) 1000 1182 95 37 18 13 8 8 3 71 aF/um^2 Area (N+active) 8275 50 19 13 10 9 8 aF/um^2 Area (P+active) 8046 aF/um^2 Area (poly) 61 16 10 7 5 4 aF/um^2 Area (metal1) 36 14 9 6 5 aF/um^2 Area (metal2) 38 14 9 6 aF/um^2 Area (metal3) 36 14 8 aF/um^2 Area (metal4) 37 13 aF/um^2 Area (metal5) 33 aF/um^2 Area (no well) 146 aF/um^2 Fringe (substrate) 262 218 16 58 53 41 23 -- aF/um Fringe (poly) 66 38 28 23 20 17 aF/um Fringe (metal1) 50 33 22 18 aF/um Fringe (metal2) 47 35 27 22 aF/um Fringe (metal3) 53 34 27 aF/um Fringe (metal4) 58 35 aF/um Fringe (metal5) 52 aF/um Overlap (P+active) 660 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.77 volts Vinv 1.5 0.81 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.64 volts Vinv 2.0 0.83 volts Gain 2.0 -23.55 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 331.03 MHz DIV1024 (31-stg,1.8V) 384.10 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T18H SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Oct 17/01 * LOT: T18H WAF: 7006 * Temperature_parameters=Default .MODEL CMOSN NMOS (LEVEL = 49 hdif = 0.25e-6 acm = 3 +VERSION = 3.1 TNOM = 27 TOX = 4.2E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3710619 +K1 = 0.5940793 K2 = 2.070131E-3 K3 = 1E-3 +K3B = 2.7158495 W0 = 1E-7 NLX = 2.005089E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.4615376 DVT1 = 0.3798134 DVT2 = 0.0692378 +U0 = 293.522312 UA = -6.73646E-10 UB = 1.164182E-18 +UC = -2.84532E-11 VSAT = 9.286324E4 A0 = 1.7591856 +AGS = 0.3162202 B0 = -5.950938E-8 B1 = -1E-7 +KETA = 0.0111532 A1 = 3.896574E-4 A2 = 1 +RDSW = 139.0465393 PRWG = 0.5 PRWB = -0.2 +WR = 1 WINT = 0 LINT = 9.265899E-9 +XL = -2E-8 XW = -1E-8 DWG = -1.343579E-9 +DWB = -1.391607E-8 VOFF = -0.0765575 NFACTOR = 2.4791597 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0 ETAB = -0.0608407 +DSUB = 1 PCLM = 0.8853499 PDIBLC1 = 0.116863 +PDIBLC2 = 0.01 PDIBLCB = -0.0475298 DROUT = 0.5922434 +PSCBE1 = 8E10 PSCBE2 = 5.248199E-10 PVAG = 0.089248 +DELTA = 0.01 RSH = 6.8 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.75E-10 CGSO = 7.75E-10 CGBO = 1E-12 +CJ = 9.955315E-4 PB = 0.7345743 MJ = 0.3629904 +CJSW = 2.586055E-10 PBSW = 0.6451808 MJSW = 0.1296914 +CJSWG = 3.3E-10 PBSWG = 0.6451808 MJSWG = 0.1296914 +CF = 0 PVTH0 = 1.33957E-3 PRDSW = -5 +PK2 = -1.7189E-4 WKETA = 0.010864 LKETA = -0.0102793 +PU0 = 37.4749547 PUA = 1.762367E-10 PUB = 9.411793E-25 +PVSAT = 2E3 PETA0 = -1E-4 PKETA = -1.356792E-3 ) * .MODEL CMOSP PMOS (LEVEL = 49 hdif = 0.25e-6 acm =3 +VERSION = 3.1 TNOM = 27 TOX = 4.2E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.4220357 +K1 = 0.5813738 K2 = 0.0303955 K3 = 0 +K3B = 11.3426872 W0 = 1E-6 NLX = 9.876034E-8 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.5131166 DVT1 = 0.2665264 DVT2 = 0.1 +U0 = 120.5316596 UA = 1.645481E-9 UB = 1E-21 +UC = -1E-10 VSAT = 2E5 A0 = 1.671928 +AGS = 0.3934127 B0 = 1.830733E-6 B1 = 4.739218E-6 +KETA = 0.0202801 A1 = 0.1976849 A2 = 0.5787213 +RDSW = 265.2609374 PRWG = 0.5 PRWB = -0.2145086 +WR = 1 WINT = 0 LINT = 2.176517E-8 +XL = -2E-8 XW = -1E-8 DWG = -4.223522E-8 +DWB = 7.670464E-9 VOFF = -0.096172 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.023671 ETAB = -0.3005133 +DSUB = 1.2320494 PCLM = 2.2844319 PDIBLC1 = 4.836921E-3 +PDIBLC2 = 0.0442167 PDIBLCB = -1E-3 DROUT = 9.991187E-4 +PSCBE1 = 1.732893E9 PSCBE2 = 5E-10 PVAG = 14.9616148 +DELTA = 0.01 RSH = 7.6 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.6E-10 CGSO = 6.6E-10 CGBO = 1E-12 +CJ = 1.183858E-3 PB = 0.8534482 MJ = 0.4124158 +CJSW = 2.066263E-10 PBSW = 0.6189346 MJSW = 0.2893774 +CJSWG = 4.22E-10 PBSWG = 0.6189346 MJSWG = 0.2893774 +CF = 0 PVTH0 = 2.308546E-3 PRDSW = 13.6874174 +PK2 = 2.657069E-3 WKETA = 2.467864E-3 LKETA = -2.56649E-3 +PU0 = -1.846164 PUA = -8.06063E-11 PUB = 1E-21 +PVSAT = -50 PETA0 = 1E-4 PKETA = 2.794471E-3 ) *