BWRC Publications

Citation
Changhwan Shin, Yasumasa Tsukamoto, Xin Sun, Tsu Jae King. "Full 3D Simulation of 6T-SRAM Cells for the 22nm Node". SISPAD 2009, September, 2009.

Abstract
6T-SRAM cell designs for the 22nm node are compared via full 3-dimensional cell simulation with Sentaurus (v.2008.09), to allow the benefits of advanced MOSFET structures to be accurately assessed. Segmented MOSFET (SegFET) technology provides for enhanced read stability and write-ability, as compared to conventional planar and tri-gate technologies. It also provides for improved SRAM cell yield, primarily because of improved robustness to process-induced variations, and improved immunity to soft errors.

Electronic downloads

• PID919421_SISPAD_archived_version0610.pdf · application/pdf · 2372 kbytes

Citation formats

• HTML

  Changhwan Shin, Yasumasa Tsukamoto, Xin Sun, Tsu Jae King.
  <a
  href="http://bwrc.eecs.berkeley.edu/php/pubs/pubs.php/1087.html">Full
  3D Simulation of 6T-SRAM Cells for the 22nm Node</a>,
  SISPAD 2009, September, 2009.

• Plain text

  Changhwan Shin, Yasumasa Tsukamoto, Xin Sun, Tsu Jae King.
  "Full 3D Simulation of 6T-SRAM Cells for the 22nm Node".
  SISPAD 2009, September, 2009.

• BibTeX

  @inproceedings{ShinTsukamotoSunKing2009,
      author = {Changhwan Shin and Yasumasa Tsukamoto and Xin Sun
                and Tsu Jae King},
      title = {Full 3D Simulation of 6T-SRAM Cells for the 22nm
                Node},
      booktitle = {SISPAD 2009},
      month = {September},
      year = {2009},
      URL = {http:///php/pubs/pubs.php/1087.html}
  }
  

Posted by Changhwan Shin on Jun 15, 2009..

Notice: This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright.