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SRAM Yield Enhancement with Thin-BOX FD-SOI
Changhwan Shin, Min Hee Cho, Yasumasa Tsukamoto, Bich-Yen Nguyen, Borivoje Nikolic, Tsu Jae King

Citation
Changhwan Shin, Min Hee Cho, Yasumasa Tsukamoto, Bich-Yen Nguyen, Borivoje Nikolic, Tsu Jae King. "SRAM Yield Enhancement with Thin-BOX FD-SOI". International SOI Conference, October, 2009.

Abstract
The performance and yield of 6-T SRAM cells implemented in thin-BOX FD-SOI technology vs. bulk technology are compared via 3-dimensional (3D) atomistic process and device simulations and analytical modeling for SRAM yield estimation. Performance is enhanced due to the elimination of channel dopants, and variation due to gate-LER and RDF are suppressed, for FD-SOI technology. For the same cell area (~0.07¥ìm2), comparable SNM can be achieved with 30% higher write current, and SRAM yield is enhanced by >2 sigma.

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Citation formats  

  • HTML
    Changhwan Shin, Min Hee Cho, Yasumasa Tsukamoto, Bich-Yen
    Nguyen, Borivoje Nikolic, Tsu Jae King. <a
    href="http://bwrc.eecs.berkeley.edu/php/pubs/pubs.php/1098.html">SRAM
    Yield Enhancement with Thin-BOX FD-SOI</a>,
    International SOI Conference, October, 2009.
  • Plain text
    Changhwan Shin, Min Hee Cho, Yasumasa Tsukamoto, Bich-Yen
    Nguyen, Borivoje Nikolic, Tsu Jae King. "SRAM Yield
    Enhancement with Thin-BOX FD-SOI". International SOI
    Conference, October, 2009.
  • BibTeX
    @inproceedings{ShinChoTsukamotoNguyenNikolicKing2009,
        author = {Changhwan Shin and Min Hee Cho and Yasumasa
                  Tsukamoto and Bich-Yen Nguyen and Borivoje Nikolic
                  and Tsu Jae King},
        title = {SRAM Yield Enhancement with Thin-BOX FD-SOI},
        booktitle = {International SOI Conference},
        month = {October},
        year = {2009},
        URL = {http:///php/pubs/pubs.php/1098.html}
    }
    

Posted by Changhwan Shin on Jul 1, 2009..

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