BWRC Publications

Citation
Jungdong Park, Ali Niknejad. "Ladder-shaped network for ESD protection of millimetre-wave CMOS ICs". Electronics Letters, 45(15), July 2009.

Abstract
A compact ladder-shaped electrostatic discharge (ESD) protection circuit is presented for millimetre-wave integrated circuits (ICs) in CMOS technology. Multiple shorted shunt stubs form a ladder network together with series stubs as ESD protection that discharges current/voltage pulses caused by an ESD event, while at the same time the network is embedded as part of the matching circuit for a normal operation. A 60 GHz low-noise amplifier using a 90 nm CMOS process is demonstrated with the proposed ESD protection methodology that introduces less than 1 dB insertion loss. Owing to the ESD current distribution through multiple shorted stubs, the proposed methodology is useful to millimetre-wave ICs with advanced CMOS technology that suffers from higher sheet resistance of the metal layers.

Electronic downloads

• EL_ESD_jungdong.pdf · application/pdf · 263 kbytes

Citation formats

• HTML

  Jungdong Park, Ali Niknejad. <a
  href="http://bwrc.eecs.berkeley.edu/php/pubs/pubs.php/1107.html">Ladder-shaped
  network for ESD protection of millimetre-wave CMOS
  ICs</a>, <i>Electronics Letters</i>,
  45(15), July 2009.

• Plain text

  Jungdong Park, Ali Niknejad. "Ladder-shaped network for ESD
  protection of millimetre-wave CMOS ICs". Electronics
  Letters, 45(15), July 2009.

• BibTeX

  @article{ParkNiknejad2009,
      author = {Jungdong Park and Ali Niknejad},
      title = {Ladder-shaped network for ESD protection of
                millimetre-wave CMOS ICs},
      journal = {Electronics Letters},
      volume = {45},
      number = {15},
      month = {July},
      year = {2009},
      URL = {http:///php/pubs/pubs.php/1107.html}
  }
  

Posted by Jungdong Park on Aug 14, 2009..

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